| ‘? _ FES8xT, FESF8xT, FEsB8xT7 www'V'Shay'C°m Vishay General Semiconductor I000 EPercent ol Rated Peak Reverse Voltage (O/O) E E 8 E T; :E g I00 ‘g % ‘/1 0 8 5 w E E Eg 50 — 200 V .3) E - 3n0—4o0v 5O.2oOVE —-—-5n0—6uov _._.5o0.6O0v . 10 0.2 0 4 0.6 0 E 1.0 12 1.4 1.6 1.8 2.0Instantaneous Forward Voltage (V) Reverse Voltage (V)Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance I00 I0 OI Instantaneous Reverse Leakage Current (uA) Fig. A - Typical Reverse Leakage Characteristics Revision: 20-Aug-13 3 Document Number: 88600 For technical questions within your region: DiogesArnericas@vishay.corn, DiogesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vIsh . m d c?9100 |